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Technology

The Challenge

The Challenge

For off-line switching converter applications 650V high-side drivers are an important building block for functionality and performance.

Heyday has created 650V high-side drivers with unique power-thru technology eliminating the need for bootstrap diodes or capacitors.

Our drivers enable highest performance in the smallest footprint.

Key Specifications

Key Specifications

– No bootstrap components required
– Quiescent current less than 200μA
– Propagation delays < 25ns
– Delay matching part-to-part < 5ns
– >100V/ns switching immunity
– No negative voltage limit on switch node

No Bootstrap Components

No Bootstrap Components

Heyday’s unique technology allows the transfer of drive information and drive energy across a tiny magnetic isolation boundary.

This alleviates the need for problematic and costly bootstrap components external to the driver.

Our solution is reliable and easy for system designers to use and integrate into a power converter. Heyday has developed drivers for both GaN and MOS FETs.

Products

Hey1011 - GaN FET 650V high-side driver

Hey1011 - GaN FET 650V high-side driver

The Hey1011 is a 650V, high-side GaN FET driver offering excellent key performance...
Hey1012 - MOS FET 650V high-side driver

Hey1012 - MOS FET 650V high-side driver

The Hey1012 is a 650V, high-side MOS FET driver offering excellent key performance...
  • Hey1011 - GaN FET 650V high-side driver
  • Hey1012 - MOS FET 650V high-side driver
  • Hey1011 - GaN FET 650V high-side driver

    The Hey1011 is a 650V, high-side GaN FET driver offering excellent key performance characteristics as outlined below.

    Hey1011 Features

    • Single 650V high-side driver
    • No bootstrap components required
    • <200uA quiescent current
    • Maximum switching frequency > 5MHz
    • 3A source and sink current capable
    • 4.5V <Vdrive< 6V range
    • Can generate Vdrive from 3.3V – so can operate without a specific Vdrive supply
    • <25ns propagation delays
    • <5ns mismatch between drivers
    • >100V/ns switching immunity
    • No limit on negative voltage swing on switched node
    • SOIC or embedded package options

    Target Applications

    • Hi-side drivers for HV GaN FET’s
    • HB, PSFB, LLC, Buck converters, SR Drivers, Secondary side control to primary drives
  • Hey1012 - MOS FET 650V high-side driver

    The Hey1012 is a 650V, high-side MOS FET driver offering excellent key performance characteristics as outlined below.

    Hey1012 Features

    • Single 650V high-side driver
    • No bootstrap components required
    • <200uA quiescent current
    • Maximum switching frequency > 5MHz
    • 3A source and sink current capable
    • 6V <Vdrive<15V range
    • Can generate Vdrive from 3.3V – so can operate without a specific Vdrive supply
    • <35ns propagation delays
    • <7ns mismatch between drivers
    • >50V/ns switching immunity
    • No limit on negative voltage swing on switched node
    • SOIC or embedded package options

    Target Applications

    • Hi-side drivers for HV MOS FET’s
    • HB, PSFB, LLC, Buck converters, SR Drivers, Secondary side control to primary drives
  • Hey1011 - GaN FET 650V high-side driver
  • Hey1012 - MOS FET 650V high-side driver
  • Management Team

    About us

    Heyday’s management team concists of an experienced, innovative and complementary team of people dedicated to making excellent products and providing solutions for our clients.
    Our advisory board, including members with extensive background in semiconductors and other industries, provides the management team with relevant insights and contacts for Heyday’s development.
    Contact us to discuss our products and our product roadmap. See the “Contact” section below.

    • Joe Duigan, Chief Executive Officer

      Joe has over 20 years experience in the semiconductor development sector. He worked with Artesyn Technologies as a power system designer and moved on to mixed-signal CMOS design in Parthus Technologies in 1998. Joe was part of the Centillium and Ikanos Communication teams that developed CMOS and SiGe based Giga-bit transceiver devices for the PON optical market. In 2011 Joe joined Texas Instruments, France, and was Engineering manager of a group responsible for development and delivery of advanced power conversion IC’s to tier 1 customers worldwide. Joe founded Heyday in 2014 and is proud of the achievements of the team and especially of the innovative products that Heyday is now bringing to the market.
    • Joe Duigan
  • Advisory Board

    About us

    Heyday’s management team concists of an experienced, innovative and complementary team of people dedicated to making excellent products and providing solutions for our clients.
    Our advisory board, including members with extensive background in semiconductors and other industries, provides the management team with relevant insights and contacts for Heyday’s development.
    Contact us to discuss our products and our product roadmap. See the “Contact” section below.

    • industry veteran

      An expert in the field of technology start-ups with many years experience in the field of power technology development. Has previoulsly co-founded a semiconductor startup that sold for tens of m$ a few years ago
    • George Young

Contact

Heyday Integrated Circuits

4 Traverse Dupont
InnovaGrasse
06130 Grasse, France

Heyday Integrated Circuits

Sophia Antipolis Business Pole
1047 Route des Dolines
06560 Valbonne, France

Contact